Invention Grant
- Patent Title: Eptaxial structure
- Patent Title (中): 光轴结构
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Application No.: US13713567Application Date: 2012-12-13
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Publication No.: US09231060B2Publication Date: 2016-01-05
- Inventor: Yang Wei , Shou-Shan Fan
- Applicant: Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
- Applicant Address: CN Beijing TW New Taipei
- Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee Address: CN Beijing TW New Taipei
- Agency: Novak Druce Connolly Bove + Quigg LLP
- Priority: CN201210122545 20120425
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/267 ; H01L29/16
Abstract:
An epitaxial structure includes a substrate having an epitaxial growth surface, a first epitaxial layer, a graphene layer and a second epitaxial layer. The first epitaxial layer is stacked on the epitaxial growth surface. The graphene layer is coated on the first epitaxial layer. The second epitaxial layer is located on the first epitaxial layer and covers the graphene layer.
Public/Granted literature
- US20130285115A1 EPTAXIAL STRUCTURE Public/Granted day:2013-10-31
Information query
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