Invention Grant
- Patent Title: Semiconductor device and fabrication method therefor
- Patent Title (中): 半导体器件及其制造方法
-
Application No.: US14189257Application Date: 2014-02-25
-
Publication No.: US09230962B2Publication Date: 2016-01-05
- Inventor: Tsung-Chieh Tsai , Yung-Che Albert Shih , Jhy-Kang Ting
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW
- Agency: Hauptman Ham, LLP
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L29/66 ; H01L21/8238 ; H01L27/02 ; H01L21/762 ; H01L29/06 ; H01L29/78 ; H01L29/165
Abstract:
A semiconductor device includes a non-conductive gate feature over a substrate and a spacer adjoining each sidewall of the non-conductive gate feature.
Public/Granted literature
- US20140167178A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR Public/Granted day:2014-06-19
Information query
IPC分类:
