Invention Grant
- Patent Title: Method for manufacturing structure having air gap
- Patent Title (中): 具有气隙的制造结构的方法
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Application No.: US14316816Application Date: 2014-06-27
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Publication No.: US09230856B2Publication Date: 2016-01-05
- Inventor: Ming-Hsin Yeh , Hsin Tai , Chan-Tsun Wu
- Applicant: Powerchip Technology Corporation
- Applicant Address: TW Hsinchu
- Assignee: Powerchip Technology Corporation
- Current Assignee: Powerchip Technology Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW103110712A 20140321
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/66 ; H01L21/308 ; H01L21/306 ; H01L21/02 ; H01L27/115 ; H01L21/768 ; H01L23/522

Abstract:
A method for manufacturing a structure having an air gap includes following steps. A plurality of patterns is formed in a pattern region of a substrate. A sacrificial layer is formed on the substrate, and a top surface of the sacrificial layer is lower than a top surface of the patterns to expose a plurality of upper portions of the patterns. A hard mask layer is formed to cover the sacrificial layer and the upper portions of the patterns. An etching-back process is performed to the hard mask layer to expose the sacrificial layer outside the pattern region, and the hard mask layer remaining inside the pattern region seals the opening between the upper portions of the patterns. The sacrificial layer is removed to form an air gap between the two adjacent patterns.
Public/Granted literature
- US20150270336A1 METHOD FOR MANUFACTURING STRUCTURE HAVING AIR GAP Public/Granted day:2015-09-24
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