Invention Grant
- Patent Title: One-time programmable memory and method for making the same
- Patent Title (中): 一次性可编程存储器及其制作方法
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Application No.: US14250267Application Date: 2014-04-10
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Publication No.: US09230813B2Publication Date: 2016-01-05
- Inventor: Harry Shengwen Luan
- Applicant: Kilopass Technology, Inc.
- Applicant Address: US CA San Jose
- Assignee: Kilopass Technology, Inc.
- Current Assignee: Kilopass Technology, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Aka Chan LLP
- Main IPC: H01L23/535
- IPC: H01L23/535 ; H01L27/112 ; H01L21/28 ; G11C17/16 ; H01L23/525
Abstract:
A one time programmable nonvolatile memory formed from metal-insulator-semiconductor cells. The cells are at the crosspoints of conductive gate lines and intersecting doped semiconductor lines formed in a semiconductor substrate.
Public/Granted literature
- US20140217484A1 ONE-TIME PROGRAMMABLE MEMORY AND METHOD FOR MAKING THE SAME Public/Granted day:2014-08-07
Information query
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