Invention Grant
- Patent Title: MEMS device and method of manufacturing the same
- Patent Title (中): MEMS器件及其制造方法
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Application No.: US13621982Application Date: 2012-09-18
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Publication No.: US09230744B2Publication Date: 2016-01-05
- Inventor: Kei Watanabe , Yoshiaki Shimooka , Tomohiro Saito , Tamio Ikehashi
- Applicant: Kei Watanabe , Yoshiaki Shimooka , Tomohiro Saito , Tamio Ikehashi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, LLP
- Priority: JP2012-005487 20120113
- Main IPC: H01G5/00
- IPC: H01G5/00 ; H01G5/16 ; H01G5/011

Abstract:
According to one embodiment, a MEMS element comprises a first electrode fixed on a substrate, a second electrode formed above the first electrode to face it, and vertically movable, a first anchor portion formed on the substrate and configured to support the second electrode, and a first spring portion configured to connect the second electrode and the first anchor portion. The first spring portion includes a liner layer includes a brittle material in contact with the second electrode and the first anchor portion, and a base layer formed on the liner layer, includes a brittle material having a composition different from that of the liner layer, and having a film thickness larger than that of the liner layer.
Public/Granted literature
- US20130182366A1 MEMS DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2013-07-18
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