Invention Grant
- Patent Title: PLZT capacitor on glass substrate
- Patent Title (中): PLZT电容器在玻璃基板上
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Application No.: US14065837Application Date: 2013-10-29
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Publication No.: US09230739B2Publication Date: 2016-01-05
- Inventor: M. Ray Fairchild , Ralph S. Taylor , Carl W. Berlin , Celine W K Wong , Beihai Ma , Uthamalingam Balachandran
- Applicant: DELPHI TECHNOLOGIES, INC. , UCHICAGO ARGONNE, LLC, OPERATOR OF ARGONNE NATIONAL LABORATORY
- Applicant Address: US IL Chicago
- Assignee: UChicago Argonne, LLC
- Current Assignee: UChicago Argonne, LLC
- Current Assignee Address: US IL Chicago
- Agent Lawrence D. Hazelton
- Main IPC: H01G4/12
- IPC: H01G4/12 ; H01G4/30 ; H01G4/33 ; H01G4/38 ; H01G4/008 ; H01L49/02

Abstract:
A lead-lanthanum-zirconium-titanate (PLZT) capacitor on a substrate formed of glass. The first metallization layer is deposited on a top side of the substrate to form a first electrode. The dielectric layer of PLZT is deposited over the first metallization layer. The second metallization layer deposited over the dielectric layer to form a second electrode. The glass substrate is advantageous as glass is compatible with an annealing process used to form the capacitor.
Public/Granted literature
- US20150116894A1 PLZT CAPACITOR ON GLASS SUBSTRATE Public/Granted day:2015-04-30
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