Invention Grant
- Patent Title: Semiconductor devices and methods of fabricating the same
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US14051841Application Date: 2013-10-11
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Publication No.: US09230612B2Publication Date: 2016-01-05
- Inventor: Jemin Park
- Applicant: Jemin Park
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2012-0116180 20121018
- Main IPC: G11C5/06
- IPC: G11C5/06 ; H01L27/108

Abstract:
A semiconductor device includes a plurality of word lines; a plurality of bit lines; and a plurality of bit line node contacts. The plurality of word lines extend in a first direction in or on a substrate. The plurality of bit lines crosses over the plurality of word lines. Each of the plurality of bit line node contacts connects a corresponding bit line to the substrate, and each of the plurality of bit line node contacts has a width substantially equal to a width of the corresponding bit line.
Public/Granted literature
- US20140112050A1 SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME Public/Granted day:2014-04-24
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