Invention Grant
- Patent Title: Backscattering for localized annealing
- Patent Title (中): 用于局部退火的后向散射
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Application No.: US13945746Application Date: 2013-07-18
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Publication No.: US09153644B2Publication Date: 2015-10-06
- Inventor: Nirmal David Theodore
- Applicant: Nirmal David Theodore
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agency: Lempia Summerfield Katz LLC
- Main IPC: H01L29/02
- IPC: H01L29/02 ; H01L21/22

Abstract:
A method of fabricating an electronic apparatus includes forming an active layer over a wafer, forming a backscatter layer over the wafer, and directing radiation toward the wafer to anneal the active layer. The backscatter layer is not transparent to the radiation, more reflective than absorptive of the radiation, and positioned such that the backscatter layer inhibits exposure of the wafer to the radiation apart from the active layer.
Public/Granted literature
- US20150021746A1 BACKSCATTERING FOR LOCALIZED ANNEALING Public/Granted day:2015-01-22
Information query
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