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US09153644B2 Backscattering for localized annealing 有权
用于局部退火的后向散射

Backscattering for localized annealing
Abstract:
A method of fabricating an electronic apparatus includes forming an active layer over a wafer, forming a backscatter layer over the wafer, and directing radiation toward the wafer to anneal the active layer. The backscatter layer is not transparent to the radiation, more reflective than absorptive of the radiation, and positioned such that the backscatter layer inhibits exposure of the wafer to the radiation apart from the active layer.
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