Invention Grant
US09153641B2 Wafer level package having cylindrical capacitor and method of fabricating the same
有权
具有圆柱形电容器的晶片级封装及其制造方法
- Patent Title: Wafer level package having cylindrical capacitor and method of fabricating the same
- Patent Title (中): 具有圆柱形电容器的晶片级封装及其制造方法
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Application No.: US13752238Application Date: 2013-01-28
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Publication No.: US09153641B2Publication Date: 2015-10-06
- Inventor: Seung Seoup Lee , Soon Gyu Yim
- Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: KR10-2009-0075760 20090817; KR10-2010-0003866 20100115
- Main IPC: H01L29/92
- IPC: H01L29/92 ; H01L21/02 ; H01L49/02 ; H01L23/522 ; H01L23/31

Abstract:
Disclosed is a wafer level package having a cylindrical capacitor, which is capable of increasing electrostatic capacity thanks to the use of a cylindrical capacitor structure and which includes a wafer chip having a bonding pad formed thereon and an insulating layer formed thereon and exposing the bonding pad, a redistribution layer connected to the bonding pad and extending to one side of the insulating layer, a cylindrical outer electrode connected to the redistribution layer and having a center opening therein, a cylindrical inner electrode formed in the center opening of the outer electrode so as to be separated from the outer electrode, a dielectric layer formed between the outer electrode and the inner electrode, and a resin sealing portion formed on the insulating layer to cover the redistribution layer, the inner electrode, the outer electrode and the dielectric layer and having a first recess for exposing an upper surface of the inner electrode. A method of fabricating the wafer level package having a cylindrical capacitor is also provided.
Public/Granted literature
- US20130147014A1 Wafer Level Package Having Cylindrical Capacitor and Method Of Fabrication The Same Public/Granted day:2013-06-13
Information query
IPC分类: