Invention Grant
- Patent Title: Operation scheme for non-volatile memory
- Patent Title (中): 非易失性存储器的操作方案
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Application No.: US13690299Application Date: 2012-11-30
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Publication No.: US09153293B2Publication Date: 2015-10-06
- Inventor: Thomas Nirschl , Jan Otterstedt , Alexander Duch
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G11C7/00 ; G11C16/04 ; G11C16/34
Abstract:
A method of operating an integrated circuit includes determining at least one characteristic of at least one memory cell and conducting an operation for the at least one memory cell, wherein based on the at least one characteristic determined a disturbance for at least one additional memory cell is adjusted.
Public/Granted literature
- US20140153348A1 Operation Scheme for Non-Volatile Memory Public/Granted day:2014-06-05
Information query
