Invention Grant
US09099651B2 Donor substrate and method for forming transfer pattern using the same
有权
供体基材和使用其形成转印图案的方法
- Patent Title: Donor substrate and method for forming transfer pattern using the same
- Patent Title (中): 供体基材和使用其形成转印图案的方法
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Application No.: US14036648Application Date: 2013-09-25
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Publication No.: US09099651B2Publication Date: 2015-08-04
- Inventor: YoungGil Kwon
- Applicant: Samsung Display Co., Ltd.
- Applicant Address: KR Yongin, Gyeonggi-Do
- Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee Address: KR Yongin, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2013-0060490 20130528
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L51/00 ; H01L51/56
Abstract:
A donor substrate includes a base layer, a light-to-heat conversion layer disposed on the base layer, a buffer layer disposed on the light-to-heat conversion layer and a transfer layer disposed on the buffer layer. The buffer layer includes a cross-linked polymer, a spacer polymer bonded to the cross-linked polymer, and a perfluoroalkyl alcohol group bonded to the spacer polymer.
Public/Granted literature
- US20140356998A1 DONOR SUBSTRATE AND METHOD FOR FORMING TRANSFER PATTERN USING THE SAME Public/Granted day:2014-12-04
Information query
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