Invention Grant
- Patent Title: Semiconductor light emitting element
- Patent Title (中): 半导体发光元件
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Application No.: US13965761Application Date: 2013-08-13
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Publication No.: US09099614B2Publication Date: 2015-08-04
- Inventor: Eisuke Yokoyama
- Applicant: TOYODA GOSEI CO., LTD.
- Applicant Address: JP Aichi
- Assignee: TOYODA GOSEI CO., LTD.
- Current Assignee: TOYODA GOSEI CO., LTD.
- Current Assignee Address: JP Aichi
- Agency: Sughrue Mion, PLLC
- Priority: JP2012-187268 20120828
- Main IPC: H01L31/102
- IPC: H01L31/102 ; H01L33/42 ; H01L33/38 ; H01L33/20

Abstract:
A semiconductor light emitting element suppressing non-uniformity in light emission on a light emitting surface is provided. An n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer are laminated in order, and a translucent electrode film is laminated on the p-type semiconductor layer and a p-electrode is provided on the translucent electrode film. On the other hand, an n-electrode is provided on a semiconductor layer exposure surface that exposes the n-type semiconductor layer. The p-electrode includes a connecting portion having a circular planar shape and an extending portion that extends like a long and slender strip from the connecting portion to encircle and face the n-electrode. Holes in the translucent electrode film are provided such that the density thereof is decreased along with a move from the n-electrode side toward the p-electrode side.
Public/Granted literature
- US20140061711A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT Public/Granted day:2014-03-06
Information query
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