Invention Grant
- Patent Title: Heterojunction photovoltaic device and fabrication method
- Patent Title (中): 异质结光伏器件及其制造方法
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Application No.: US13194301Application Date: 2011-07-29
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Publication No.: US09099596B2Publication Date: 2015-08-04
- Inventor: Stephen W. Bedell , Keith E. Fogel , Bahman Hekmatshoar-Tabari , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
- Applicant: Stephen W. Bedell , Keith E. Fogel , Bahman Hekmatshoar-Tabari , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Louis J. Percello
- Main IPC: H01L31/0745
- IPC: H01L31/0745 ; H01L31/18 ; H01L31/0312 ; H01L31/0747 ; H01L31/0725 ; H01L31/078 ; H01L31/20
Abstract:
A photovoltaic device and method include a doped germanium-containing substrate, an emitter contact coupled to the substrate on a first side and a back contact coupled to the substrate on a side opposite the first side. The emitter includes at least one doped layer of an opposite conductivity type as that of the substrate and the back contact includes at least one doped layer of the same conductivity type as that of the substrate. The at least one doped layer of the emitter contact or the at least one doped layer of the back contact is in direct contact with the substrate, and the at least one doped layer of the emitter contact or the back contact includes an n-type material having an electron affinity smaller than that of the substrate, or a p-type material having a hole affinity larger than that of the substrate.
Public/Granted literature
- US20130025655A1 HETEROJUNCTION PHOTOVOLTAIC DEVICE AND FABRICATION METHOD Public/Granted day:2013-01-31
Information query
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