Invention Grant
US09099583B2 Nanowire device with alumina passivation layer and methods of making same
有权
具有氧化铝钝化层的纳米线器件及其制造方法
- Patent Title: Nanowire device with alumina passivation layer and methods of making same
- Patent Title (中): 具有氧化铝钝化层的纳米线器件及其制造方法
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Application No.: US13353087Application Date: 2012-01-18
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Publication No.: US09099583B2Publication Date: 2015-08-04
- Inventor: Faris Modawar , Marcie R. Black , Brian Murphy , Jeff Miller , Mike Jura
- Applicant: Faris Modawar , Marcie R. Black , Brian Murphy , Jeff Miller , Mike Jura
- Applicant Address: US MA Woburn
- Assignee: BANDGAP ENGINEERING, INC.
- Current Assignee: BANDGAP ENGINEERING, INC.
- Current Assignee Address: US MA Woburn
- Agency: Lando & Anastasi, LLP
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L31/0352 ; H01L31/028 ; H01L31/0288 ; H01L31/18
Abstract:
In one aspect, the present disclosure relates to a device including a silicon substrate, wherein at least a portion of the substrate surface can be a silicon nanowire array; and a layer of alumina covering the silicon nanowire array. In some embodiments, the device can be a solar cell. In some embodiments, the device can be a p-n junction. In some embodiments, the p-n junction can be located below the bottom surface the nanowire array.
Public/Granted literature
- US20120153250A1 Nanowire Device with Alumina Passivation Layer and Methods of Making Same Public/Granted day:2012-06-21
Information query
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