Invention Grant
US09099578B2 Structure for creating ohmic contact in semiconductor devices and methods for manufacture
有权
用于在半导体器件中形成欧姆接触的结构和制造方法
- Patent Title: Structure for creating ohmic contact in semiconductor devices and methods for manufacture
- Patent Title (中): 用于在半导体器件中形成欧姆接触的结构和制造方法
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Application No.: US13844521Application Date: 2013-03-15
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Publication No.: US09099578B2Publication Date: 2015-08-04
- Inventor: Atsushi Yamaguchi , Jose Briceno
- Applicant: NUSOLA, INC.
- Applicant Address: US AZ Scottsdale
- Assignee: Nusola, Inc.
- Current Assignee: Nusola, Inc.
- Current Assignee Address: US AZ Scottsdale
- Agency: Manatt, Phelps & Phillips LLP
- Agent Robert D. Becker
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L31/0224 ; H01L31/20 ; H01L31/0216 ; H01L31/18
Abstract:
A semiconductor-to-metal interface with ohmic contact is provided. The interface includes a semiconductor material, a metal layer, and a silicon carbide layer disposed between the semiconductor material and the metal layer. The silicon carbide layer causes the formation of a semiconductor-to-metal interface with ohmic contact. Applications include forming a photovoltaic device with ohmic contact by disposing a layer of silicon carbide over the photovoltaic material before depositing a bottom electrode layer of metal to complete the bottom of a photovoltaic cell.
Public/Granted literature
- US20130320343A1 STRUCTURE FOR CREATING OHMIC CONTACT IN SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURE Public/Granted day:2013-12-05
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