Invention Grant
- Patent Title: Method of manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US14634427Application Date: 2015-02-27
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Publication No.: US09099484B2Publication Date: 2015-08-04
- Inventor: Hiroshi Fujii , Shigeki Tanaka , Kazuaki Yoshida
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2013-111360 20130527
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/56 ; H01L23/22 ; H01L23/29 ; H01L23/495

Abstract:
A method of manufacturing a semiconductor device, includes providing a lead frame including a frame portion, including a through hole penetrating the lead frame, a device forming portion surrounded by the frame portion in plan view, including a die pad, and a semiconductor chip mounted on the die pad; after the providing step, sealing the semiconductor chip with sealing resin by supplying the sealing resin to the device forming portion via a first region of the frame portion in which the through hole is formed in plan view, thereby forming a sealing body sealing the device forming portion and the first region of the frame portion; and after the sealing step, removing a first part of the sealing body located at the first region of the frame portion from the lead frame by inserting a pin into the through hole.
Public/Granted literature
- US20150179480A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2015-06-25
Information query
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