Invention Grant
- Patent Title: High speed gallium nitride transistor devices
- Patent Title (中): 高速氮化镓晶体管器件
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Application No.: US13453127Application Date: 2012-04-23
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Publication No.: US09099433B2Publication Date: 2015-08-04
- Inventor: Bruce M. Green , Karen E. Moore , Olin Hartin
- Applicant: Bruce M. Green , Karen E. Moore , Olin Hartin
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agency: Terrile, Cannatti, Chambers & Holland, LLP
- Agent Michael Rocco Cannatti
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/40 ; H01L29/423 ; H01L29/66 ; H01L29/778 ; H01L29/20
Abstract:
A low leakage current switch device (110) is provided which includes a GaN-on-Si substrate (11-13) covered by a passivation surface layer (43) in which a T-gate electrode with sidewall extensions (48) is formed and coated with a conformal passivation layer (49) so that the T-gate electrode sidewall extensions are spaced apart from the underlying passivation surface layer (43) by the conformal passivation layer (49).
Public/Granted literature
- US20130277680A1 High Speed Gallium Nitride Transistor Devices Public/Granted day:2013-10-24
Information query
IPC分类:
