Invention Grant
- Patent Title: Semiconductor device
-
Application No.: US13544513Application Date: 2012-07-09
-
Publication No.: US09099362B2Publication Date: 2015-08-04
- Inventor: Jun Koyama
- Applicant: Jun Koyama
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Nixon & Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2000-342016 20001109
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H03K17/687 ; H01L27/12 ; H01L29/04 ; H01L29/423 ; H01L29/66 ; G02F1/1345 ; G09G3/32 ; H01L29/786

Abstract:
In a conventional analog buffer circuit composed of polycrystalline semiconductor TFTs, a variation in the output is large. Thus, a measure such as to provide a correction circuit has been taken. However, there has been such a problem that a circuit and driver operation are complicated. Therefore, a gate length and a gate width of a TFT composing an analog buffer circuit is set to be larger. Also, a multi-gate structure is adopted thereto. In addition, the arrangement of channel regions is devised. Thus, the analog buffer circuit having a small variation is obtained without using a correction circuit, and a semiconductor device having a small variation can be provided.
Public/Granted literature
- US20120268194A1 SEMICONDUCTOR DEVICE Public/Granted day:2012-10-25
Information query
IPC分类: