Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13479376Application Date: 2012-05-24
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Publication No.: US09099355B2Publication Date: 2015-08-04
- Inventor: Shunpei Yamazaki , Jun Koyama , Setsuo Nakajima
- Applicant: Shunpei Yamazaki , Jun Koyama , Setsuo Nakajima
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2000-061297 20000306
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L27/12 ; G02F1/1362
Abstract:
A display device includes a main body, a support stand, and a display portion. The display portion includes a pixel having a TFT and a capacitor. The capacitor includes a capacitor electrode on an insulating surface, an insulating film on the capacitor electrode, and a pixel electrode of the TFT on the insulating film.
Public/Granted literature
- US20120229725A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2012-09-13
Information query
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