Invention Grant
- Patent Title: Field effect transistor
- Patent Title (中): 场效应晶体管
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Application No.: US14162681Application Date: 2014-01-23
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Publication No.: US09099341B2Publication Date: 2015-08-04
- Inventor: Hiromasa Saeki
- Applicant: MURATA MANUFACTURING CO., LTD.
- Applicant Address: JP Kyoto-fu
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Kyoto-fu
- Agency: Studebaker & Brackett PC
- Priority: JP2011-168515 20110801
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/10 ; H01L29/423 ; H01L29/778 ; H01L29/20
Abstract:
The following layers are deposited above the upper surface of a base substrate in this order with a lattice relaxation layer therebetween: a lower barrier layer made of AlxGa1-xN (0
Public/Granted literature
- US20140138743A1 FIELD EFFECT TRANSISTOR Public/Granted day:2014-05-22
Information query
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