Invention Grant
- Patent Title: Super-junction structures having implanted regions surrounding an N epitaxial layer in deep trench
- Patent Title (中): 具有围绕深沟槽中的N外延层的注入区域的超结结构
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Application No.: US14031089Application Date: 2013-09-19
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Publication No.: US09099320B2Publication Date: 2015-08-04
- Inventor: Fu-Yuan Hsieh
- Applicant: Force Mos Technology Co., Ltd.
- Applicant Address: TW New Taipei
- Assignee: FORCE MOS TECHNOLOGY CO., LTD.
- Current Assignee: FORCE MOS TECHNOLOGY CO., LTD.
- Current Assignee Address: TW New Taipei
- Agency: Bacon & Thomas, PLLC
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/66 ; H01L21/265 ; H01L21/3065
Abstract:
A super junction structure having implanted column regions surrounding an N epitaxial layer in a deep trench is disclosed to overcome charge imbalance problem and to further reduce Rds. The inventive super junction can be used for MOSFET and Schottky rectifier.
Public/Granted literature
- US20150076594A1 SUPER-JUNCTION STRUCTURES HAVING IMPLANTED REGIONS SURROUNDING AN N EPITAXIAL LAYER IN DEEP TRENCH Public/Granted day:2015-03-19
Information query
IPC分类:
