Invention Grant
- Patent Title: Method for producing nitride crystal and nitride crystal
- Patent Title (中): 氮化物晶体和氮化物晶体的制造方法
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Application No.: US13661090Application Date: 2012-10-26
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Publication No.: US09096945B2Publication Date: 2015-08-04
- Inventor: Yutaka Mikawa , Hideo Fujisawa , Kazunori Kamada , Hirobumi Nagaoka , Shinichiro Kawabata , Yuji Kagamitani
- Applicant: MITSUBISHI CHEMICAL CORPORATION
- Applicant Address: JP Chiyoda-ku
- Assignee: MITSUBISHI CHEMICAL CORPORATION
- Current Assignee: MITSUBISHI CHEMICAL CORPORATION
- Current Assignee Address: JP Chiyoda-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2012-025711 20120209; JP2012-188099 20120828
- Main IPC: C30B7/00
- IPC: C30B7/00 ; C30B7/10 ; C30B29/40
Abstract:
A high-quality nitride crystal can be produced efficiently by charging a nitride crystal starting material that contains tertiary particles having a maximum diameter of from 1 to 120 mm and formed through aggregation of secondary particles having a maximum diameter of from 100 to 1000 μm, in the starting material charging region of a reactor, followed by crystal growth in the presence of a solvent in a supercritical state and/or a subcritical state in the reactor, wherein the nitride crystal starting material is charged in the starting material charging region in a bulk density of from 0.7 to 4.5 g/cm3 for the intended crystal growth.
Public/Granted literature
- US20130108537A1 METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL Public/Granted day:2013-05-02
Information query
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