Invention Grant
- Patent Title: Plasma-generating device
- Patent Title (中): 等离子体发生装置
-
Application No.: US14099275Application Date: 2013-12-06
-
Publication No.: US09078337B2Publication Date: 2015-07-07
- Inventor: I-Nan Lin
- Applicant: TAMKANG UNIVERSITY
- Applicant Address: TW New Taipei
- Assignee: Tamkang University
- Current Assignee: Tamkang University
- Current Assignee Address: TW New Taipei
- Agency: The Webb Law Firm
- Priority: TW100122225 20110624; TW102120111 20130606
- Main IPC: H05H1/48
- IPC: H05H1/48 ; C23C16/02 ; C23C16/27

Abstract:
A plasma-generating device includes an anode plate and a cathode plate spaced apart from the anode plate. The cathode plate includes a substrate and a hybrid diamond layer formed on the substrate. The hybrid diamond layer includes ultra-nanocrystalline diamond grains, an amorphous carbon disposed among and bonded to the ultra-nanocrystalline diamond grains, micro-crystalline diamond grains disposed among the ultra-nanocrystalline diamond grains, and a graphite phase disposed among the ultra-nanocrystalline diamond grains. Each of the micro-crystalline diamond grains is surrounded by the graphite phase.
Public/Granted literature
- US20140097740A1 PLASMA-GENERATING DEVICE Public/Granted day:2014-04-10
Information query
IPC分类: