Invention Grant
- Patent Title: Adaptive on die decoupling devices and methods
- Patent Title (中): 适用于芯片去耦器件和方法
-
Application No.: US14153580Application Date: 2014-01-13
-
Publication No.: US09077305B2Publication Date: 2015-07-07
- Inventor: Timothy M. Hollis , Steven Bodily
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H03H7/00
- IPC: H03H7/00 ; H03H7/01 ; H01L23/64 ; H01L49/02

Abstract:
Semiconductor dies and methods are described, such as those including a first capacitive pathway having a first effective series resistance (ESR) and a second capacitive pathway having an adjustable ESR. One such device provides for optimizing the semiconductor die for different operating conditions such as operating frequency. As a result, semiconductor dies can be manufactured in a single configuration for several different operating frequencies, and each die can be tuned to reduce (e.g. minimize) supply noise, such as by varying the ESR or the capacitance of at least one of the pathways.
Public/Granted literature
- US20140125424A1 ADAPTIVE ON DIE DECOUPLING DEVICES AND METHODS Public/Granted day:2014-05-08
Information query