Invention Grant
- Patent Title: Method of forming a low power dissipation regulator and structure therefor
- Patent Title (中): 形成低功耗调节器及其结构的方法
-
Application No.: US13991488Application Date: 2010-12-14
-
Publication No.: US09077256B2Publication Date: 2015-07-07
- Inventor: Christophe Basso , Jean-Paul Louvel
- Applicant: Christophe Basso , Jean-Paul Louvel
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agent Robert F. Hightower
- International Application: PCT/US2010/060197 WO 20101214
- International Announcement: WO2012/082106 WO 20120621
- Main IPC: H02M3/335
- IPC: H02M3/335 ; G05F1/575 ; H05K13/00
Abstract:
In one embodiment, a method of forming a conditioning circuit includes configuring an output biasing network to provide a biasing voltage to an MOS transistor to enable the MOS transistor to operate in a saturated operating mode for input voltages that are less than a threshold voltage.
Public/Granted literature
- US20130272034A1 METHOD OF FORMING A LOW POWER DISSIPATION REGULATOR AND STRUCTURE THEREFOR Public/Granted day:2013-10-17
Information query
IPC分类:
