Invention Grant
US09077151B2 Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than +/-15 degrees in the C-direction
有权
半平面III族氮化物光电子器件在M面平面衬底上，在C方向上具有小于+/- 15度的倾斜度
- Patent Title: Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than +/-15 degrees in the C-direction
- Patent Title (中): 半平面III族氮化物光电子器件在M面平面衬底上，在C方向上具有小于+/- 15度的倾斜度
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Application No.: US13041120Application Date: 2011-03-04
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Publication No.: US09077151B2Publication Date: 2015-07-07
- Inventor: Po Shan Hsu , Kathryn M. Kelchner , Robert M. Farrell , Daniel A. Haeger , Hiroaki Ohta , Anurag Tyagi , Shuji Nakamura , Steven P. DenBaars , S. James Speck
- Applicant: Po Shan Hsu , Kathryn M. Kelchner , Robert M. Farrell , Daniel A. Haeger , Hiroaki Ohta , Anurag Tyagi , Shuji Nakamura , Steven P. DenBaars , S. James Speck
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S5/32 ; B82Y20/00 ; H01L21/02 ; H01S5/343 ; H01S5/20 ; H01S5/22 ; H01S5/30 ; H01S5/34
Abstract:
An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15
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