Invention Grant
- Patent Title: Semiconductor light emitting element
- Patent Title (中): 半导体发光元件
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Application No.: US14315681Application Date: 2014-06-26
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Publication No.: US09076929B2Publication Date: 2015-07-07
- Inventor: Hiroshi Katsuno , Shinji Saito , Rei Hashimoto , Jongil Hwang , Shinya Nunoue
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2013-138301 20130701
- Main IPC: H01L29/72
- IPC: H01L29/72 ; H01L33/38 ; H01L25/075 ; H01L33/40 ; H01L33/22

Abstract:
According to one embodiment, a semiconductor light emitting element includes a first electrode, first and second light emitting units, first and second conductive layers, a first connection electrode, a first dielectric layer, first and second pads, and a first inter-light emitting unit dielectric layer. The first light emitting unit includes first and second semiconductor layers, and a first light emitting layer. The first semiconductor layer includes a first semiconductor portion and a second semiconductor portion. The second light emitting unit includes a third semiconductor layer, a fourth semiconductor layer, and a second light emitting layer. The fourth semiconductor layer is electrically connected with the first electrode. The first conductive layer is electrically connected with the third semiconductor layer. The second conductive layer is electrically connected with the second semiconductor layer. The first connection electrode electrically connects the first conductive layer and the first semiconductor portion.
Public/Granted literature
- US20150001561A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT Public/Granted day:2015-01-01
Information query
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