Invention Grant
- Patent Title: Process of forming an aluminum p-doped surface region of a semiconductor substrate
- Patent Title (中): 形成半导体衬底的铝p掺杂表面区域的工艺
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Application No.: US13667047Application Date: 2012-11-02
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Publication No.: US09076919B2Publication Date: 2015-07-07
- Inventor: Kenneth Warren Hang , Alistair Graeme Prince , Michael Rose , Richard John Sheffield Young
- Applicant: E I DU PONT DE NEMOURS AND COMPANY
- Applicant Address: US DE Wilmington
- Assignee: E I DU PONT DE NEMOURS AND COMPANY
- Current Assignee: E I DU PONT DE NEMOURS AND COMPANY
- Current Assignee Address: US DE Wilmington
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L31/18 ; H01L21/22 ; H01L21/225 ; H01L31/06 ; H01L31/0224
Abstract:
A process for the formation of at least one aluminum p-doped surface region of a semiconductor substrate comprising the steps: (1) providing a semiconductor substrate, (2) applying and drying an aluminum paste on at least one surface area of the semiconductor substrate, (3) firing the dried aluminum paste, and (4) removing the fired aluminum paste with water, wherein the aluminum paste employed in step (2) includes particulate aluminum, an organic vehicle and 3 to 20 wt. % of glass frit, based on total aluminum paste composition.
Public/Granted literature
- US20130112250A1 PROCESS OF FORMING AN ALUMINUM P-DOPED SURFACE REGION OF A SEMICONDUCTOR SUBSTRATE Public/Granted day:2013-05-09
Information query
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