Invention Grant
- Patent Title: Techniques for processing a substrate
- Patent Title (中): 用于处理基材的技术
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Application No.: US12756026Application Date: 2010-04-07
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Publication No.: US09076914B2Publication Date: 2015-07-07
- Inventor: Kevin M. Daniels , Russell L. Low , Benjamin B. Riordon
- Applicant: Kevin M. Daniels , Russell L. Low , Benjamin B. Riordon
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Main IPC: A61N5/00
- IPC: A61N5/00 ; H01L31/068 ; H01L21/266 ; H01L31/18

Abstract:
Herein, an improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for processing a substrate. The method may comprise directing an ion beam comprising a plurality of ions along an ion beam path, from an ion source to the substrate; disposing at least a portion of a mask in the ion beam path, between the ion source and the substrate; and translating one of the substrate and the mask relative to other one of the substrate and the mask.
Public/Granted literature
- US20110089343A1 TECHNIQUES FOR PROCESSING A SUBSTRATE Public/Granted day:2011-04-21
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