Invention Grant
US09076887B2 Method of fabricating a vertical diffusion metal-oxide-semiconductor transistor
有权
制造垂直扩散金属氧化物半导体晶体管的方法
- Patent Title: Method of fabricating a vertical diffusion metal-oxide-semiconductor transistor
- Patent Title (中): 制造垂直扩散金属氧化物半导体晶体管的方法
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Application No.: US13464584Application Date: 2012-05-04
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Publication No.: US09076887B2Publication Date: 2015-07-07
- Inventor: Tsung-Hsiung Lee , Shang-Hui Tu , Rudy Octavius Sihombing
- Applicant: Tsung-Hsiung Lee , Shang-Hui Tu , Rudy Octavius Sihombing
- Applicant Address: TW Hsinchu
- Assignee: Vanguard International Semiconductor Corporation
- Current Assignee: Vanguard International Semiconductor Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: TW100145294A 20111208
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L21/336 ; H01L21/8234 ; H01L29/06 ; H01L21/265 ; H01L27/088
Abstract:
A method for fabricating a semiconductor device is provided. A method for fabricating a semiconductor device includes providing a semiconductor substrate having a first conductive type. An epitaxy layer having the first conductive type is formed on the semiconductor substrate. First trenches are formed in the epitaxy layer. First insulating liner layers are formed on sidewalls and bottoms of the first trenches. A first dopant having the first conductive type dopes the epitaxy layer from the sidewalls of the first trenches to form first doped regions. A first insulating material is filled into the first trenches. Second trenches are formed in the epitaxy layer. Second insulating liner layers are formed on sidewalls and bottoms of the second trenches. A second dopant having a second conductive type dopes the epitaxy layer from the sidewalls of the second trenches to form second doped regions.
Public/Granted literature
- US20130149822A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2013-06-13
Information query
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