Invention Grant
- Patent Title: Thin film transistor substrate with pixel matrix
- Patent Title (中): 具有像素矩阵的薄膜晶体管衬底
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Application No.: US13951338Application Date: 2013-07-25
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Publication No.: US09076875B2Publication Date: 2015-07-07
- Inventor: Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2012-177958 20120810
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L29/786 ; H01L27/12

Abstract:
A thin film transistor substrate includes a thin film transistor, a source wire, an upper-layer source wire, and a pixel electrode. The thin film transistor includes: a source electrode and a drain electrode located to be spaced from each other on the same plane; a semiconductor film located to straddle those electrodes; an insulating film located to cover at least the source electrode, the drain electrode, and the semiconductor film; an upper-layer source electrode and an upper-layer drain electrode located on the insulating film and respectively connected to the semiconductor film through contact holes; and a gate electrode located below or above the semiconductor film. The source wire extends from the source electrode. The upper-layer source wire extends from the upper-layer source electrode. The pixel electrode is electrically connected to the drain electrode.
Public/Granted literature
- US20140042430A1 THIN FILM TRANSISTOR SUBSTRATE Public/Granted day:2014-02-13
Information query
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