Invention Grant
- Patent Title: Method of forming a high density dielectric etch-stop layer
- Patent Title (中): 形成高密度电介质蚀刻停止层的方法
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Application No.: US14045054Application Date: 2013-10-03
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Publication No.: US09076845B2Publication Date: 2015-07-07
- Inventor: Joung-Wei Liou , Han-Ti Hsiaw , Keng-Chu Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Associates, LLC
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36 ; H01L21/768 ; H01L23/538 ; H01L21/48
Abstract:
A method of manufacturing an integrated circuit device includes forming an inter-level dielectric layer over a semiconductor substrate, forming a transformative layer over the inter-level dielectric layer, forming a protective layer over the transformative layer without allowing the transformative layer to undergo a substantive transformation, and after forming the protective layer, causing the transformative layer to undergo a volume-increasing transformation. The volume-increasing transformation produces a high density material that provides an effective etch stop.
Public/Granted literature
- US20150097288A1 High Density Dielectric Etch Stop Layer Public/Granted day:2015-04-09
Information query
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