Invention Grant
- Patent Title: Vertically base-connected bipolar transistor
- Patent Title (中): 垂直基极连接的双极晶体管
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Application No.: US13855354Application Date: 2013-04-02
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Publication No.: US09076835B2Publication Date: 2015-07-07
- Inventor: Badih El-Kareh , Leonard Forbes , Kie Y. Ahn
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: H01L29/80
- IPC: H01L29/80 ; H01L29/73 ; H01L21/8249 ; H01L27/06 ; H01L29/66 ; H01L29/732 ; H01L29/737 ; H03K17/60
Abstract:
Methods, devices, and systems for using and forming vertically base-connected bipolar transistors have been shown. The vertically base-connected bipolar transistors in the embodiments of the present disclosure are formed with a CMOS fabrication technique that decreases the transistor size while maintaining the high performance characteristics of a bipolar transistor.
Public/Granted literature
- US20130214847A1 VERTICALLY BASE-CONNECTED BIPOLAR TRANSISTOR Public/Granted day:2013-08-22
Information query
IPC分类:
