Invention Grant
- Patent Title: Bi-layer metal deposition in silicide formation
- Patent Title (中): 硅化物形成中的双层金属沉积
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Application No.: US14024209Application Date: 2013-09-11
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Publication No.: US09076823B2Publication Date: 2015-07-07
- Inventor: Sheng-Hsuan Lin , Chih-Wei Chang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/66 ; H01L21/285
Abstract:
A method includes performing a first sputtering to form a first metal film on a surface of a semiconductor region. The first sputtering is performed using a first ion energy. The method further includes performing a second sputtering to form a second metal film over and contacting the first metal film, wherein the first and the second metal films includes a same metal. The second sputtering is performed using a second ion energy lower than the first ion energy. An annealing is performed to react the first and the second metal films with the semiconductor region to form a metal silicide.
Public/Granted literature
- US20150072494A1 Bi-Layer Metal Deposition in Silicide Formation Public/Granted day:2015-03-12
Information query
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