Invention Grant
US09076813B1 Gate-all-around metal-oxide-semiconductor transistors with gate oxides
有权
具有栅极氧化物的栅极全金属氧化物半导体晶体管
- Patent Title: Gate-all-around metal-oxide-semiconductor transistors with gate oxides
- Patent Title (中): 具有栅极氧化物的栅极全金属氧化物半导体晶体管
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Application No.: US14156176Application Date: 2014-01-15
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Publication No.: US09076813B1Publication Date: 2015-07-07
- Inventor: Seung-Chang Lee , Steven Brueck , Daniel Feezell
- Applicant: Seung-Chang Lee , Steven Brueck , Daniel Feezell
- Applicant Address: US NM Albuquerque
- Assignee: STC.UNM
- Current Assignee: STC.UNM
- Current Assignee Address: US NM Albuquerque
- Agency: MH2 Technology Law Group, LLP
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/66 ; H01L21/28 ; H01L29/78 ; B82Y15/00
Abstract:
A method and structure for a semiconductor transistor, including various embodiments. In embodiments, a transistor channel can be formed between a semiconductor source and a semiconductor drain, wherein a transistor gate oxide completely surrounds the transistor channel and a transistor gate metal that completely surrounds the transistor gate oxide. Related fabrication processes are presented for similar device embodiments based on a Group III-V semiconductor material and silicon-on-insulator materials.
Information query
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