Invention Grant
US09076805B2 Current sense transistor with embedding of sense transistor cells
有权
具有感测晶体管单元的嵌入的电流检测晶体管
- Patent Title: Current sense transistor with embedding of sense transistor cells
- Patent Title (中): 具有感测晶体管单元的嵌入的电流检测晶体管
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Application No.: US13549463Application Date: 2012-07-14
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Publication No.: US09076805B2Publication Date: 2015-07-07
- Inventor: Steffen Thiele , Andreas Meiser , Markus Zundel
- Applicant: Steffen Thiele , Andreas Meiser , Markus Zundel
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L23/58 ; H01L29/417 ; H03K17/082 ; H01L27/12 ; G01R19/00
Abstract:
A semiconductor device a field of transistor cells integrated in a semiconductor body. A number of the transistor cells forming a power transistor and at least one of the transistor cells forming a sense transistor. A first source electrode is arranged on the semiconductor body electrically connected to the transistor cell(s) of the sense transistor but electrically isolated from the transistor cells of the power transistor. A second source electrode is arranged on the semiconductor body and covers the transistor cells of both the power transistor and the sense transistor, and at least partially covering the first source electrode in such a manner that the second source electrode is electrically connected only to the transistor cells of the power transistor but electrically isolated from the transistor cells of the sense transistor.
Public/Granted literature
- US20140015046A1 Current Sense Transistor with Embedding of Sense Transistor Cells Public/Granted day:2014-01-16
Information query
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