Invention Grant
US09076790B1 Air gap forming techniques based on anodic alumina for interconnect structures
有权
基于阳极氧化铝的空隙形成技术用于互连结构
- Patent Title: Air gap forming techniques based on anodic alumina for interconnect structures
- Patent Title (中): 基于阳极氧化铝的空隙形成技术用于互连结构
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Application No.: US14151158Application Date: 2014-01-09
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Publication No.: US09076790B1Publication Date: 2015-07-07
- Inventor: Chia-Tien Wu , Tien-Lu Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Associates, LLC
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/50 ; H01L29/40 ; H01L23/522 ; H01L23/532 ; H01L21/768 ; H01L21/02
Abstract:
An aluminum (Al) layer is formed over a semiconductor substrate. A selective portion of the Al layer is removed to form openings. The Al layer is anodized to obtain an alumina dielectric layer with a plurality of pores substantially perpendicular to a surface of the semiconductor substrate. The openings are filled with a conductive interconnect material. The pores are widened to form air gaps and a top etch stop layer is formed over the alumina dielectric layer.
Public/Granted literature
- US20150194383A1 AIR GAP FORMING TECHNIQUES BASED ON ANODIC ALUMINA FOR INTERCONNECT STRUCTURES Public/Granted day:2015-07-09
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