Invention Grant
- Patent Title: Semiconductor device having a high frequency external connection electrode positioned within a via hole
- Patent Title (中): 具有定位在通孔内的高频外部连接电极的半导体器件
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Application No.: US14148202Application Date: 2014-01-06
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Publication No.: US09076789B2Publication Date: 2015-07-07
- Inventor: Yoshitaka Aiba , Tetsuya Fujisawa , Yoshiyuki Yoneda
- Applicant: FUJITSU SEMICONDUCTOR LIMITED
- Applicant Address: JP Yokohama
- Assignee: SOCIONEXT INC.
- Current Assignee: SOCIONEXT INC.
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2005-042872 20050218
- Main IPC: H01L23/02
- IPC: H01L23/02 ; H01L23/48 ; H01L23/498 ; H01L23/522 ; H01L23/538 ; H01L23/552 ; H01L23/66 ; H01L25/18 ; H01L23/31 ; H01L23/00
Abstract:
A semiconductor device is disclosed that includes a support substrate, a first semiconductor element that is mounted on one side of the support substrate, a second semiconductor element including a high frequency electrode that is mounted on the one side of the support substrate, a via hole that is provided at the support substrate in relation to the high frequency electrode, and an external connection electrode that is provided on the other side of the support substrate in relation to the via hole.
Public/Granted literature
- US20140117562A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-05-01
Information query
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