Invention Grant
- Patent Title: Semiconductor device and a method of manufacturing same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13894756Application Date: 2013-05-15
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Publication No.: US09076774B2Publication Date: 2015-07-07
- Inventor: Yukihiro Kumagai , Michiaki Hiyoshi
- Applicant: Hitachi Power Semiconductor Device, Ltd.
- Applicant Address: JP Hitachi-shi
- Assignee: Hitachi Power Semiconductor Device, Ltd.
- Current Assignee: Hitachi Power Semiconductor Device, Ltd.
- Current Assignee Address: JP Hitachi-shi
- Agency: Crowell & Moring LLP
- Priority: JP2012-120376 20120528
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/488 ; H01L21/02 ; H01L23/373 ; H01L23/544 ; H01L25/07 ; H01L23/047 ; H01L23/00 ; H01L23/498
Abstract:
In a semiconductor device where a metal circuit layer is disposed over a main planar surface of an insulating substrate, a semiconductor chip is connected by way of a solder over the metal circuit layer, and a metal wiring is connected over the metal circuit layer, in which a solder flow prevention area comprising a linear oxide material is formed between the semiconductor chip and the ultrasonic metal bonding region over the metal circuit layer.
Public/Granted literature
- US20130313711A1 Semiconductor Device And A Method Of Manufacturing Same Public/Granted day:2013-11-28
Information query
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