Invention Grant
- Patent Title: Methods of forming a plurality of capacitors
- Patent Title (中): 形成多个电容器的方法
-
Application No.: US13964947Application Date: 2013-08-12
-
Publication No.: US09076757B2Publication Date: 2015-07-07
- Inventor: Che-Chi Lee
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John, P.S.
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L27/108 ; H01L27/02

Abstract:
A method of forming a plurality of capacitors includes providing a plurality of capacitor electrodes, an elevationally inner insulative retaining material received laterally about the capacitor electrodes, an elevationally outer insulative retaining material received laterally about the capacitor electrodes, a first material received laterally about the capacitor electrodes elevationally inward of the inner insulative retaining material, and a second material received laterally about the capacitor electrodes elevationally between the inner and outer insulative retaining materials. Openings are anisotropically etched to extend through the outer insulative retaining material and the second material. After the anisotropic etching, remaining of the second material is isotropically etched through the openings from being received laterally about the capacitor electrodes between the inner and outer insulative retaining materials. The isotropic etching of the second material is conducted selectively relative to the capacitor electrodes and the inner and outer insulative retaining materials. The capacitor electrodes are ultimately incorporated into a plurality of capacitors.
Public/Granted literature
- US20130323902A1 Methods of Forming a Plurality of Capacitors Public/Granted day:2013-12-05
Information query
IPC分类: