Invention Grant
- Patent Title: Oxidation annealing device and method for fabricating thin film transistor using oxidation annealing
- Patent Title (中): 氧化退火装置及使用氧化退火制造薄膜晶体管的方法
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Application No.: US13883027Application Date: 2011-10-28
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Publication No.: US09076742B2Publication Date: 2015-07-07
- Inventor: Yoshifumi Ota , Masato Hashimoto
- Applicant: Yoshifumi Ota , Masato Hashimoto
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Keating & Bennett, LLP
- Priority: JP2010-248647 20101105
- International Application: PCT/JP2011/006065 WO 20111028
- International Announcement: WO2012/060079 WO 20120510
- Main IPC: C23C16/00
- IPC: C23C16/00 ; H01L21/469 ; H01L21/00 ; H01L21/324 ; H01L21/67 ; H01L29/786 ; H01L21/477
Abstract:
A far-infrared plane heater 6 is placed in a closed-container-shaped device body 3 of an oxidation annealing device 1, an oxygen addition gas feed pipe 8 through which an oxygen addition gas containing water vapor and oxygen is fed into the device body 3 is connected to a gas exhaust pipe 11 through which gas in the device body 3 is discharged, and jet nozzles 16 through which the oxygen addition gas containing water vapor and oxygen is ejected to an oxygen-deficient portion of a substrate 50 are brought into communication with the oxygen addition gas feed pipe 8. This allows oxidation annealing of a large substrate at high throughput and low cost while preventing a leakage current.
Public/Granted literature
- US20130280925A1 OXIDATION ANNEALING DEVICE AND METHOD FOR FABRICATING THIN FILM TRANSISTOR USING OXIDATION ANNEALING Public/Granted day:2013-10-24
Information query
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