Composition for resist underlayer film, process for forming resist underlayer film, patterning process, and fullerene derivative

Invention Grant

US09076738B2 Composition for resist underlayer film, process for forming resist underlayer film, patterning process, and fullerene derivative 有权

Title translation: 用于抗蚀剂下层膜的组合物，用于形成抗蚀剂下层膜的方法，图案化工艺和富勒烯衍生物

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Patent Title: Composition for resist underlayer film, process for forming resist underlayer film, patterning process, and fullerene derivative
Patent Title (中): 用于抗蚀剂下层膜的组合物，用于形成抗蚀剂下层膜的方法，图案化工艺和富勒烯衍生物
Application No.: US13183175

Application Date: 2011-07-14
Publication No.: US09076738B2

Publication Date: 2015-07-07
Inventor: Takeru Watanabe , Toshihiko Fujii , Takeshi Kinsho , Tsutomu Ogihara
Applicant: Takeru Watanabe , Toshihiko Fujii , Takeshi Kinsho , Tsutomu Ogihara
Applicant Address: JP Tokyo
Assignee: SHIN-ETSU CHEMICAL CO., LTD.
Current Assignee: SHIN-ETSU CHEMICAL CO., LTD.
Current Assignee Address: JP Tokyo
Agency: Oliff PLC
Priority: JP2010-186579 20100823
Main IPC: H01L21/311
IPC: H01L21/311 ; C07C69/753 ; G03F7/11 ; H01L21/027

Composition for resist underlayer film, process for forming resist underlayer film, patterning process, and fullerene derivative

Abstract:

The invention provides a composition for a resist underlayer film, the composition for a resist underlayer film to form a resist underlayer film of a multilayer resist film used in lithography, wherein the composition comprises at least (A) a fullerene derivative that is a reaction product of a substance having a fullerene skeleton with a 1,3-diene compound derivative having an electron-withdrawing group and (B) an organic solvent. There can be a composition for a resist underlayer film for a multilayer resist film used in lithography, the composition giving a resist underlayer film having excellent high dry etching resistance, capable of suppressing wiggling during substrate etching with high effectiveness, and capable of avoiding a poisoning problem in upperlayer patterning that uses a chemical amplification resist; a process for forming a resist underlayer film; a patterning process; and a fullerene derivative.

Abstract(Chinese):

本发明提供了一种用于抗蚀剂下层膜的组合物，用于形成抗蚀剂下层膜的组合物，用于形成用于光刻的多层抗蚀剂膜的抗蚀剂下层膜，其中所述组合物至少包含（A）富勒烯衍生物，其为反应产物具有富勒烯骨架的物质与具有吸电子基团的1,3-二烯化合物衍生物和（B）有机溶剂。可以使用用于光刻中的多层抗蚀剂膜的抗蚀剂下层膜的组合物，该组合物赋予抗蚀剂下层膜，其具有优异的耐干蚀刻性，能够高效地抑制基板蚀刻期间的扭曲，并且能够避免中毒使用化学增幅抗蚀剂的上层图案化问题; 形成抗蚀剂下层膜的工序; 图案化过程; 和富勒烯衍生物。

Public/Granted literature

US20120045900A1 COMPOSITION FOR RESIST UNDERLAYER FILM, PROCESS FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND FULLERENE DERIVATIVE Public/Granted day:2012-02-23

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理
H01L21/311	.......绝缘层的刻蚀