Invention Grant
- Patent Title: Nonvolatile semiconductor memory device
- Patent Title (中): 非易失性半导体存储器件
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Application No.: US13547567Application Date: 2012-07-12
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Publication No.: US09076722B2Publication Date: 2015-07-07
- Inventor: Kiwamu Sakuma , Masahiro Kiyotoshi , Atsuhiro Kinoshita , Haruka Kusai
- Applicant: Kiwamu Sakuma , Masahiro Kiyotoshi , Atsuhiro Kinoshita , Haruka Kusai
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-157158 20110715
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/788 ; H01L29/66 ; H01L29/792 ; H01L27/24 ; H01L21/8234 ; H01L27/115 ; H01L27/22 ; H01L21/84 ; H01L27/12 ; H01L27/06
Abstract:
According to one embodiment, a nonvolatile semiconductor memory device includes fin-type stacked layer structures. Each of the structures includes semiconductor layers stacked in a perpendicular direction. Assist gate electrodes are disposed in an in-plane direction and divided on a surface in the perpendicular direction of the structures.
Public/Granted literature
- US20130181184A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2013-07-18
Information query
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