Invention Grant
- Patent Title: High-voltage transistor device and production method
- Patent Title (中): 高压晶体管器件及生产方法
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Application No.: US14365080Application Date: 2012-11-21
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Publication No.: US09076676B2Publication Date: 2015-07-07
- Inventor: Martin Knaipp
- Applicant: ams AG
- Applicant Address: AT Unterpremstaetten
- Assignee: ams AG
- Current Assignee: ams AG
- Current Assignee Address: AT Unterpremstaetten
- Agency: McDermott Will & Emery LLP
- Priority: DE102011056412 20111214
- International Application: PCT/EP2012/073280 WO 20121121
- International Announcement: WO2013/087386 WO 20130620
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L21/266 ; H01L29/78 ; H01L29/06 ; H01L29/66
Abstract:
A body region (3) with a first type of electric conductivity is arranged at the upper surface (10) of a substrate (1) in a well (2), wherein a portion of the well that is not occupied by the body region has a second type of conductivity opposite the first type of conductivity. At the upper surface, a source region is arranged in the body region and a drain region is arranged in the well at a distance from the body region; the source region and the drain region both have the second type of conductivity. The body region is arranged underneath a surface area of the upper surface that has a border (7) with opposing first border sides (8). The well has a varying depth in the substrate. The depth of the well is smaller underneath the first border sides of the body region than in a portion of the body region that is spaced apart from the first border sides.
Public/Granted literature
- US20140332906A1 HIGH-VOLTAGE TRANSISTOR DEVICE AND PRODUCTION METHOD Public/Granted day:2014-11-13
Information query
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