Invention Grant
- Patent Title: Fin-JFET
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Application No.: US13960574Application Date: 2013-08-06
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Publication No.: US09076662B2Publication Date: 2015-07-07
- Inventor: Badih El-Kareh , Leonard Forbes
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L27/06 ; H01L29/78 ; H01L21/8232 ; H01L21/84 ; H01L27/085 ; H01L27/092 ; H01L27/098 ; H01L27/12 ; H01L29/808
Abstract:
Methods, devices, and systems integrating Fin-JFETs and Fin-MOSFETs are provided. One method embodiment includes forming at least on Fin-MOSFET on a substrate and forming at least on Fin-JFET on the substrate.
Public/Granted literature
- US20130313618A1 FIN-JFET Public/Granted day:2013-11-28
Information query
IPC分类:
