Invention Grant
- Patent Title: High precision metal thin film liftoff technique
- Patent Title (中): 高精度金属薄膜剥离技术
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Application No.: US14496674Application Date: 2014-09-25
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Publication No.: US09076658B1Publication Date: 2015-07-07
- Inventor: Ari D. Brown , Amil A. Patel
- Applicant: The United States of America, as represented by the Administrator of the National Aeronautics and Space Administration
- Applicant Address: US DC Washington
- Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
- Current Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
- Current Assignee Address: US DC Washington
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/033 ; H01L21/283
Abstract:
A metal film liftoff process includes applying a polymer layer onto a silicon substrate, applying a germanium layer over the polymer layer to create a bilayer lift off mask, applying a patterned photoresist layer over the germanium layer, removing an exposed portion of the germanium layer, removing the photoresist layer and a portion of the polymer layer to expose a portion of the substrate and create an overhanging structure of the germanium layer, depositing a metal film over the exposed portion of the substrate and the germanium layer, and removing the polymer and germanium layers along with the overlaying metal film.
Information query
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