Invention Grant
- Patent Title: Electrochemical etching of semiconductors
- Patent Title (中): 半导体电化学蚀刻
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Application No.: US13924547Application Date: 2013-06-22
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Publication No.: US09076657B2Publication Date: 2015-07-07
- Inventor: Gary Hamm , Jason A. Reese , George R. Allardyce
- Applicant: Rohm and Haas Electronic Materials LLC
- Applicant Address: US MA Marlborough
- Assignee: Rohm and Haas Electronic Materials LLC
- Current Assignee: Rohm and Haas Electronic Materials LLC
- Current Assignee Address: US MA Marlborough
- Agent John J. Piskorski
- Main IPC: C25D5/34
- IPC: C25D5/34 ; H01L21/288 ; H01L21/465 ; C25D11/00 ; C25D11/02 ; C25F3/12 ; C25F3/00 ; H01L23/00 ; C25D11/32 ; C25D5/00 ; C25D5/12 ; C25D7/12 ; H01L31/0224 ; H01L31/18 ; C25D3/12
Abstract:
Semiconductors are electrochemically etched in solutions containing sources of bifluoride and nickel ions. The electrochemical etching may form pores in the surface of the semiconductor in the nanometer range. The etched semiconductor is then nickel plated.
Public/Granted literature
- US20130288476A1 ELECTROCHEMICAL ETCHING OF SEMICONDUCTORS Public/Granted day:2013-10-31
Information query
