Invention Grant
- Patent Title: Film forming method and apparatus
- Patent Title (中): 成膜方法和装置
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Application No.: US13905734Application Date: 2013-05-30
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Publication No.: US09076649B2Publication Date: 2015-07-07
- Inventor: Keisuke Suzuki , Kentaro Kadonaga , Volker Hemel , Bernhard Zobel
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer
- Priority: JP2012-126632 20120602; JP2013-035472 20130226
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/02 ; C23C16/34 ; C23C16/455
Abstract:
A method of forming a thin film on a surface of target objects in a vacuum-evacuable processing chamber by using a source gas and a reaction gas includes: forming a mixed gas by mixing the source gas and an inert gas in a gas reservoir tank, and supplying the mixed gas and the reaction gas into the processing chamber.
Public/Granted literature
- US20130323935A1 FILM FORMING METHOD AND APPARATUS Public/Granted day:2013-12-05
Information query
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