Invention Grant
- Patent Title: Supercritical processing apparatus, substrate processing system and supercritical processing method
- Patent Title (中): 超临界处理装置,基板处理系统和超临界处理方法
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Application No.: US12652794Application Date: 2010-01-06
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Publication No.: US09076643B2Publication Date: 2015-07-07
- Inventor: Takayuki Toshima , Kazuo Terada
- Applicant: Takayuki Toshima , Kazuo Terada
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Abelman, Frayne & Schwab
- Priority: JP2009-001786 20090701
- Main IPC: H01L21/02
- IPC: H01L21/02

Abstract:
Disclosed is a supercritical processing apparatus which can suppress the occurrence of pattern collapse, improve the throughput, and prolong a maintenance interval. In the disclosed supercritical processing apparatus to remove a liquid remained on a substrate by a super-critical state processing fluid, a heating unit heats the processing fluid to place the processing fluid into a processing receptacle in a supercritical state, and a cooling mechanism forcibly cools an area capable of transferring the heat to the substrate from the heating unit in order to suppress the liquid from being evaporated from the substrate until the substrate is disposed on a seating unit.
Public/Granted literature
- US20110000507A1 SUPERCRITICAL PROCESSING APPARATUS, SUBSTRATE PROCESSING SYSTEM AND SUPERCRITICAL PROCESSING METHOD Public/Granted day:2011-01-06
Information query
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