Invention Grant
- Patent Title: Thin film capacitor
- Patent Title (中): 薄膜电容器
-
Application No.: US13796986Application Date: 2013-03-12
-
Publication No.: US09076600B2Publication Date: 2015-07-07
- Inventor: Yoshihiko Yano , Tatsuo Namikawa , Yasunobu Oikawa
- Applicant: TDK Corporation
- Applicant Address: JP Tokyo
- Assignee: TDK Corporation
- Current Assignee: TDK Corporation
- Current Assignee Address: JP Tokyo
- Agency: Posz Law Group, PLC
- Priority: JP2012-070965 20120327
- Main IPC: H01G4/30
- IPC: H01G4/30 ; H01G4/005 ; H01G4/228 ; H01G4/33 ; H01G4/38 ; H01G4/232

Abstract:
A thin film capacitor includes two or more of dielectric body layers that are alternately laminated on an under-electrode, and internal electrode layers that are laminated between the dielectric body layers, and are exposed off the dielectric body layer, and a connection electrode that is electrically connected to the internal electrode layers via the exposed portion of the internal electrode layers, A relationship between an average grain size D of crystal grains in the internal electrode layers and an average grain size d of crystal grains in the connection electrode is D>d.
Public/Granted literature
- US20130258545A1 THIN FILM CAPACITOR Public/Granted day:2013-10-03
Information query